Pressure-induced resonant Raman scattering in Ge/Si islands
10.1063/1.1471377
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sg-nus-scholar.10635-829272023-10-30T20:19:07Z Pressure-induced resonant Raman scattering in Ge/Si islands Teo, K.L. Qin, L. Shen, Z.X. Schmidt, O.G. PHYSICS ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1471377 Applied Physics Letters 80 16 2919-2921 APPLA 2014-10-07T04:35:10Z 2014-10-07T04:35:10Z 2002-04-22 Article Teo, K.L., Qin, L., Shen, Z.X., Schmidt, O.G. (2002-04-22). Pressure-induced resonant Raman scattering in Ge/Si islands. Applied Physics Letters 80 (16) : 2919-2921. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1471377 00036951 http://scholarbank.nus.edu.sg/handle/10635/82927 000175068900034 Scopus |
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PHYSICS Teo, K.L. Qin, L. Shen, Z.X. Schmidt, O.G. |
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Teo, K.L. Qin, L. Shen, Z.X. Schmidt, O.G. |
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Teo, K.L. Qin, L. Shen, Z.X. Schmidt, O.G. Pressure-induced resonant Raman scattering in Ge/Si islands |
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Teo, K.L. |
title |
Pressure-induced resonant Raman scattering in Ge/Si islands |
title_short |
Pressure-induced resonant Raman scattering in Ge/Si islands |
title_full |
Pressure-induced resonant Raman scattering in Ge/Si islands |
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Pressure-induced resonant Raman scattering in Ge/Si islands |
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Pressure-induced resonant Raman scattering in Ge/Si islands |
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pressure-induced resonant raman scattering in ge/si islands |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/82927 |
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