Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature

Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature

10.1063/1.3541885

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Bibliographic Details
Main Authors: Wong, L.M., Chiam, S.Y., Huang, J.Q., Wang, S.J., Pan, J.S., Chim, W.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82992
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Institution: National University of Singapore
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Summary:10.1063/1.3541885

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