APA引文

Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y., Zhan, C., . . . ENGINEERING, E. &. C. (2014). Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure.

Chicago Style Citation

Han, G., P. Guo, Y. Yang, L. Fan, Y.S Yee, C. Zhan, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Source Engineering for Tunnel Field-effect Transistor: Elevated Source With Vertical Silicon-germanium/germanium Heterostructure. 2014.

MLA引文

Han, G., et al. Source Engineering for Tunnel Field-effect Transistor: Elevated Source With Vertical Silicon-germanium/germanium Heterostructure. 2014.