A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers

A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers

Asia-Pacific Microwave Conference Proceedings, APMC

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Bibliographic Details
Main Authors: Zhong, Z., Guo, Y., Leong, M.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
GaAs MESFETs
Gate-charge Model
Large-signal Model
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83393
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Institution: National University of Singapore
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