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|      \\   / _ \\   / ____||   / _ \\   | |/ // 
|  --  //  / //\ \\ / //---`'  | / \ ||  | ' //  
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`------`  `-`   `-`   `----`    `---`    `-` --`

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Text this: Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)