Text this: Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

             ___     _    _     ______   _    _   
    ___     / _ \\  | || | ||  /_   _// | \  / || 
   /   ||  | / \ || | || | ||   -| ||-  |  \/  || 
  | [] ||  | \_/ || | \\_/ ||   _| ||_  | .  . || 
   \__ ||   \___//   \____//   /_____// |_|\/|_|| 
    -|_||   `---`     `---`    `-----`  `-`  `-`  
     `-`