APA引文

Wu, N., Zhang, Q., Zhu, C., Shen, C., Li, M., Chan, D., . . . ENGINEERING, E. &. C. (2014). BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric.

Chicago Style Citation

Wu, N., Q. Zhang, C. Zhu, C. Shen, M.F Li, D.S.H Chan, N. Balasubramanian, and ELECTRICAL & COMPUTER ENGINEERING. BTI and Charge Trapping in Germanium P- And N-MOSFETs With CVD HfO 2 Gate Dielectric. 2014.

MLA引文

Wu, N., et al. BTI and Charge Trapping in Germanium P- And N-MOSFETs With CVD HfO 2 Gate Dielectric. 2014.