發送短信 : Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

             ___     _    _     _____     _  __  
    ___     / _ \\  | || | ||  |  ___||  | |/ // 
   /   ||  | / \ || | || | ||  | ||__    | ' //  
  | [] ||  | \_/ || | \\_/ ||  | ||__    | . \\  
   \__ ||   \___//   \____//   |_____||  |_|\_\\ 
    -|_||   `---`     `---`    `-----`   `-` --` 
     `-`