Multi-level lateral phase change memory based on N-doped Sb 70Te30 super-lattice like structure

Multi-level lateral phase change memory based on N-doped Sb 70Te30 super-lattice like structure

10.1109/IMW.2010.5488400

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Bibliographic Details
Main Authors: Yang, H.X., Shi, L.P., Lee, H.K., Zhao, R., Li, M.H., Li, J.M., Lim, K.G., Chong, T.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83988
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83988

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