Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth

10.1002/pssc.200778509

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Bibliographic Details
Main Authors:	Zang, K.Y., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84059
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-840592023-10-29T23:31:10Z Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth Zang, K.Y. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1002/pssc.200778509 Physica Status Solidi (C) Current Topics in Solid State Physics 5 6 1585-1588 2014-10-07T04:48:19Z 2014-10-07T04:48:19Z 2008 Conference Paper Zang, K.Y., Chua, S.J. (2008). Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth. Physica Status Solidi (C) Current Topics in Solid State Physics 5 (6) : 1585-1588. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200778509 18626351 http://scholarbank.nus.edu.sg/handle/10635/84059 000256695700033 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1002/pssc.200778509
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zang, K.Y. Chua, S.J.
format	Conference or Workshop Item
author	Zang, K.Y. Chua, S.J.
spellingShingle	Zang, K.Y. Chua, S.J. Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
author_sort	Zang, K.Y.
title	Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
title_short	Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
title_full	Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
title_fullStr	Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
title_full_unstemmed	Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
title_sort	orders of magnitude reduction in dislocation density in gan grown on si (111) by nano lateral epitaxial overgrowth
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84059
_version_	1781784417586380800

Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth

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