APA引文

Lin, J., Lee, S., Oh, H., Yang, W., Lo, G., Kwong, D., . . . ENGINEERING, E. &. C. (2014). Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack.

Chicago Style Citation

Lin, J., S. Lee, H.-J Oh, W. Yang, G.Q Lo, D.L Kwong, D.Z Chi, and ELECTRICAL & COMPUTER ENGINEERING. Plasma PH3-passivated High Mobility Inversion InGaAs MOSFET Fabricated With Self-aligned Gate-first Process and HfO2/TaN Gate Stack. 2014.

MLA引文

Lin, J., et al. Plasma PH3-passivated High Mobility Inversion InGaAs MOSFET Fabricated With Self-aligned Gate-first Process and HfO2/TaN Gate Stack. 2014.