Raman scattering studies of Ge/Si islands under hydrostatic pressure
10.1002/pssb.200405239
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sg-nus-scholar.10635-841232024-11-08T21:04:27Z Raman scattering studies of Ge/Si islands under hydrostatic pressure Teo, K.L. Shen, Z.X. Schmidt, O.G. ELECTRICAL & COMPUTER ENGINEERING PHYSICS 10.1002/pssb.200405239 Physica Status Solidi (B) Basic Research 241 14 3274-3278 2014-10-07T04:49:04Z 2014-10-07T04:49:04Z 2004-11 Conference Paper Teo, K.L., Shen, Z.X., Schmidt, O.G. (2004-11). Raman scattering studies of Ge/Si islands under hydrostatic pressure. Physica Status Solidi (B) Basic Research 241 (14) : 3274-3278. ScholarBank@NUS Repository. https://doi.org/10.1002/pssb.200405239 03701972 http://scholarbank.nus.edu.sg/handle/10635/84123 000225422300031 Scopus |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Teo, K.L. Shen, Z.X. Schmidt, O.G. |
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Teo, K.L. Shen, Z.X. Schmidt, O.G. |
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Teo, K.L. Shen, Z.X. Schmidt, O.G. Raman scattering studies of Ge/Si islands under hydrostatic pressure |
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Teo, K.L. |
title |
Raman scattering studies of Ge/Si islands under hydrostatic pressure |
title_short |
Raman scattering studies of Ge/Si islands under hydrostatic pressure |
title_full |
Raman scattering studies of Ge/Si islands under hydrostatic pressure |
title_fullStr |
Raman scattering studies of Ge/Si islands under hydrostatic pressure |
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Raman scattering studies of Ge/Si islands under hydrostatic pressure |
title_sort |
raman scattering studies of ge/si islands under hydrostatic pressure |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84123 |
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