發送短信 : Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer

  _  _      ___      ____     __   __   _____    
 | \| ||   / _ \\   |  _ \\   \ \\/ // |  __ \\  
 |  ' ||  | / \ ||  | |_| ||   \ ` //  | |  \ || 
 | .  ||  | \_/ ||  | .  //     | ||   | |__/ || 
 |_|\_||   \___//   |_|\_\\     |_||   |_____//  
 `-` -`    `---`    `-` --`     `-`'    -----`