Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing zno as electron transport layer

Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing zno as electron transport layer

10.1109/INEC.2013.6466043

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Bibliographic Details
Main Authors: Elumalai, N.K., Vijila, C., Sridhar, A., Ramakrishna, S.
Other Authors: MECHANICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Electron selective layer
Solution processed
Temperature dependence
Trap depth
Zinc Oxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/85996
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/85996

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