High performance 1.3 μm InGaAsN superluminescent diodes

• Main Authors: Qu, Y., Li, H., Zhang, J.X., Bo, B., Gao, X., Liu, G.
• 其他作者: MATERIALS SCIENCE AND ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: InGaAsN; Schottky contact; Superluminescent diodes
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/86394
• 機構: National University of Singapore

10.1007/s11431-008-0233-3