Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping

Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping

10.1209/0295-5075/106/17006

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Bibliographic Details
Main Authors: Sun, J., Yu, Z., Huang, Y., Xia, Y., Lai, W.S., Gong, H.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86701
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Institution: National University of Singapore
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Summary:10.1209/0295-5075/106/17006

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