Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition

• Main Authors: Zhang, J.X., Qu, Y., Chen, Y.Z., Uddin, A., Chen, P., Chua, S.J.
• Other Authors: MATERIALS SCIENCE AND ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Defect; Gallium nitride; MOCVD; Photoluminescence
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/86730
• Institution: National University of Singapore

10.1016/j.tsf.2006.07.111