Effects of impurity concentration on dielectric loss in Zn-doped InP at microwave X-band frequencies

Effects of impurity concentration on dielectric loss in Zn-doped InP at microwave X-band frequencies

10.1063/1.356638

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Bibliographic Details
Main Authors: Ding, X.Z., Taijing, L., Ong, C.K., Tan, B.T.G.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96364
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Institution: National University of Singapore
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Summary:10.1063/1.356638

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