Ong, K., Pey, K., Lee, P., Wee, A., Wang, X., Tung, C., . . . PHYSICS. (2014). Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor.
Chicago Style CitationOng, K.K., K.L Pey, P.S Lee, A.T.S Wee, X.C Wang, C.H Tung, L.J Tang, Y.F Chong, and PHYSICS. Role of Low Temperature Rapid Thermal Annealing in Post-laser-annealed P-channel Metal-oxide-semiconductor Field Effect Transistor. 2014.
MLA引文Ong, K.K., et al. Role of Low Temperature Rapid Thermal Annealing in Post-laser-annealed P-channel Metal-oxide-semiconductor Field Effect Transistor. 2014.
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