Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry

Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry

10.1016/j.commatsci.2004.02.031

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Bibliographic Details
Main Authors: Huang, M., Feng, Y.P.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Electronic property
First principles
IV-V alloy
Silicon phosphide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98729
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Institution: National University of Singapore
Description
Summary:10.1016/j.commatsci.2004.02.031

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