Boron-doped MnTe semiconductor-sensitized ZnO solar cells

We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nano...

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Main Authors: Tubtimtae A., Sheangliw S., Hongsith K., Choopun S.
Format: Article
Language:English
Published: Indian Academy of Sciences 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-84907979445&partnerID=40&md5=214df32535b8f95581d2a017f7ee5042
http://cmuir.cmu.ac.th/handle/6653943832/37665
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-376652014-12-09T05:56:31Z Boron-doped MnTe semiconductor-sensitized ZnO solar cells Tubtimtae A. Sheangliw S. Hongsith K. Choopun S. We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15-30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of (αhν)2 vs hν with band gaps of 1·30 and 1·27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device. 2014-12-09T05:56:31Z 2014-12-09T05:56:31Z 2014 Article 02504707 BUMSD http://www.scopus.com/inward/record.url?eid=2-s2.0-84907979445&partnerID=40&md5=214df32535b8f95581d2a017f7ee5042 http://cmuir.cmu.ac.th/handle/6653943832/37665 English Indian Academy of Sciences
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
language English
description We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15-30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of (αhν)2 vs hν with band gaps of 1·30 and 1·27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.
format Article
author Tubtimtae A.
Sheangliw S.
Hongsith K.
Choopun S.
spellingShingle Tubtimtae A.
Sheangliw S.
Hongsith K.
Choopun S.
Boron-doped MnTe semiconductor-sensitized ZnO solar cells
author_facet Tubtimtae A.
Sheangliw S.
Hongsith K.
Choopun S.
author_sort Tubtimtae A.
title Boron-doped MnTe semiconductor-sensitized ZnO solar cells
title_short Boron-doped MnTe semiconductor-sensitized ZnO solar cells
title_full Boron-doped MnTe semiconductor-sensitized ZnO solar cells
title_fullStr Boron-doped MnTe semiconductor-sensitized ZnO solar cells
title_full_unstemmed Boron-doped MnTe semiconductor-sensitized ZnO solar cells
title_sort boron-doped mnte semiconductor-sensitized zno solar cells
publisher Indian Academy of Sciences
publishDate 2014
url http://www.scopus.com/inward/record.url?eid=2-s2.0-84907979445&partnerID=40&md5=214df32535b8f95581d2a017f7ee5042
http://cmuir.cmu.ac.th/handle/6653943832/37665
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