Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics
In this study, the B2O3 doped Ba(Ti 0.9Sn0.1)O3 ceramics were prepared by using a solid state reaction method. Wide ranges of frequency (0.1 Hz to 1 MHz) and temperature (20-280 °C) dependence of the impedance relaxation were investigated. The impedance study indicates the presence of both dielectri...
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th-cmuir.6653943832-386902015-06-16T07:53:57Z Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics Tawichai,N. Sutjarittangtham,K. Tunkasiri,T. Pengpat,K. Rujijanagul,G. Wang,J. Surfaces, Coatings and Films Materials Chemistry Electronic, Optical and Magnetic Materials Ceramics and Composites Process Chemistry and Technology In this study, the B2O3 doped Ba(Ti 0.9Sn0.1)O3 ceramics were prepared by using a solid state reaction method. Wide ranges of frequency (0.1 Hz to 1 MHz) and temperature (20-280 °C) dependence of the impedance relaxation were investigated. The impedance study indicates the presence of both dielectric relaxation in bulk and grain boundary effects in the material. The relaxation times for grain and grain boundary estimated from Cole-Cole plots varied with temperature according to the Arrhenius relation. The activation energy for grain and grain boundary were estimated to be 0.73 and 0.85 eV, respectively. © 2012 Elsevier Ltd and Techna Group S.r.l. 2015-06-16T07:53:57Z 2015-06-16T07:53:57Z 2013-05-01 Conference Paper 02728842 2-s2.0-84875704658 10.1016/j.ceramint.2012.10.051 http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84875704658&origin=inward http://cmuir.cmu.ac.th/handle/6653943832/38690 Elsevier Limited |
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Surfaces, Coatings and Films Materials Chemistry Electronic, Optical and Magnetic Materials Ceramics and Composites Process Chemistry and Technology Tawichai,N. Sutjarittangtham,K. Tunkasiri,T. Pengpat,K. Rujijanagul,G. Wang,J. Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics |
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In this study, the B2O3 doped Ba(Ti 0.9Sn0.1)O3 ceramics were prepared by using a solid state reaction method. Wide ranges of frequency (0.1 Hz to 1 MHz) and temperature (20-280 °C) dependence of the impedance relaxation were investigated. The impedance study indicates the presence of both dielectric relaxation in bulk and grain boundary effects in the material. The relaxation times for grain and grain boundary estimated from Cole-Cole plots varied with temperature according to the Arrhenius relation. The activation energy for grain and grain boundary were estimated to be 0.73 and 0.85 eV, respectively. © 2012 Elsevier Ltd and Techna Group S.r.l. |
format |
Conference or Workshop Item |
author |
Tawichai,N. Sutjarittangtham,K. Tunkasiri,T. Pengpat,K. Rujijanagul,G. Wang,J. |
author_facet |
Tawichai,N. Sutjarittangtham,K. Tunkasiri,T. Pengpat,K. Rujijanagul,G. Wang,J. |
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Tawichai,N. |
title |
Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics |
title_short |
Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics |
title_full |
Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics |
title_fullStr |
Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics |
title_full_unstemmed |
Dielectric dispersion and impedance spectroscopy of B3+-doped Ba(Ti0.9Sn0.1)O3 ceramics |
title_sort |
dielectric dispersion and impedance spectroscopy of b3+-doped ba(ti0.9sn0.1)o3 ceramics |
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Elsevier Limited |
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2015 |
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http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84875704658&origin=inward http://cmuir.cmu.ac.th/handle/6653943832/38690 |
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