Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors

© 2016 Taylor & Francis Group, LLC. III-Nitride wide band gap semiconductors are well known for optoelectronic and electronic applications. They however have disadvantages, for example, the high cost of Indium, difficulties of p-type doping and phase separation in their alloys. In this work, t...

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Main Author: Punya Jaroenjittichai A.
Format: Journal
Published: 2017
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982299785&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/41435
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-414352017-09-28T04:21:18Z Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors Punya Jaroenjittichai A. © 2016 Taylor & Francis Group, LLC. III-Nitride wide band gap semiconductors are well known for optoelectronic and electronic applications. They however have disadvantages, for example, the high cost of Indium, difficulties of p-type doping and phase separation in their alloys. In this work, the novel II-Ge-N 2 semiconductors that are related to III-N by replacing the group-III with a group-II (Mg and Cd) and a group-IV (Ge) are investigated. The lattice parameters of the II-Ge-N 2 are predicted by a full potential linear muffin-tin orbital (FP-LMTO) approach within the generalized gradient approximation (GGA). The results are also compared with those of ZnGeN 2 . Furthermore, the formation energies of the new materials and their competing compounds, such as Zn 3 N 2 , Mg 3 N 2 , Cd 3 N 2 and Ge 3 N 4 , are calculated from the constituent elements. The chemical potential diagrams for stability, which are constructed from the calculated formation energies, facilitate us to determine the allowed ranges of the chemical potentials of the elements where the compounds are stable at zero temperature and pressure. 2017-09-28T04:21:18Z 2017-09-28T04:21:18Z 2016-10-12 Journal 10584587 2-s2.0-84982299785 10.1080/10584587.2016.1204202 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982299785&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/41435
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
description © 2016 Taylor & Francis Group, LLC. III-Nitride wide band gap semiconductors are well known for optoelectronic and electronic applications. They however have disadvantages, for example, the high cost of Indium, difficulties of p-type doping and phase separation in their alloys. In this work, the novel II-Ge-N 2 semiconductors that are related to III-N by replacing the group-III with a group-II (Mg and Cd) and a group-IV (Ge) are investigated. The lattice parameters of the II-Ge-N 2 are predicted by a full potential linear muffin-tin orbital (FP-LMTO) approach within the generalized gradient approximation (GGA). The results are also compared with those of ZnGeN 2 . Furthermore, the formation energies of the new materials and their competing compounds, such as Zn 3 N 2 , Mg 3 N 2 , Cd 3 N 2 and Ge 3 N 4 , are calculated from the constituent elements. The chemical potential diagrams for stability, which are constructed from the calculated formation energies, facilitate us to determine the allowed ranges of the chemical potentials of the elements where the compounds are stable at zero temperature and pressure.
format Journal
author Punya Jaroenjittichai A.
spellingShingle Punya Jaroenjittichai A.
Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
author_facet Punya Jaroenjittichai A.
author_sort Punya Jaroenjittichai A.
title Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
title_short Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
title_full Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
title_fullStr Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
title_full_unstemmed Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
title_sort formation energies and chemical potential diagrams of ii-ge-n<inf>2</inf> semiconductors
publishDate 2017
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982299785&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/41435
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