Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors

• المؤلف الرئيسي: Punya Jaroenjittichai A.
• التنسيق: دورية
• منشور في: 2017
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982299785&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/41435
• المؤسسة: Chiang Mai University

© 2016 Taylor & Francis Group, LLC. III-Nitride wide band gap semiconductors are well known for optoelectronic and electronic applications. They however have disadvantages, for example, the high cost of Indium, difficulties of p-type doping and phase separation in their alloys. In this work, t...