Ultra-responsive hydrogen gas sensors based on PdO nanoparticle-decorated WO<inf>3</inf> nanorods synthesized by precipitation and impregnation methods

• Main Authors: Kabcum S., Channei D., Tuantranont A., Wisitsoraat A., Liewhiran C., Phanichphant S.
• Format: Journal
• Published: 2017
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84954288999&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/41995
• Institution: Chiang Mai University

© 2015 Elsevier B.V. All rights reserved. Pd-loaded tungsten oxides are highly promising for hydrogen sensing due to their high response and selectivity derived from widely-accepted spillover mechanisms. Nevertheless, the sensing performances may be further improved by modifying the composite structure with a distinctive preparation process. In this work, high-aspect-ratio WO 3 nanorods were produced by a modified precipitation method utilizing ethylene glycol as a dispersing agent and impregnated with Pd nanoparticles to achieve ultra-responsive hydrogen sensors. Characterizations by electron microscopy, X-ray diffraction and X-ray photoemission spectroscopy showed that Pd-loaded WO 3 nanostructures comprised 5-20 nm spherical or oval PdO nanoparticles dispersed over the surface of polycrystalline WO 3 nanorods. The sensing films were prepared by spin coating of Pd-loaded WO 3 nanopowder in an organic paste onto Al 2 O 3 substrates equipped with interdigitated Au electrodes. The hydrogen-sensing performances of Pd-loaded WO 3 sensor were systematically investigated at low working temperature ranging from 25 to 350 °C with varying Pd loading levels from 0 to 2 wt%. It was found that 1 wt% Pd loaded WO 3 sensing film exhibited the highest response of 3.14 × 10 6 with a short response time of 1.8 s to 3 vol% H 2 at the optimal operating temperature of 150 °C. In addition, it still displayed a good response of 80.4 to 3.0 vol% of H 2 at 25 °C. Moreover, the sensor had very high H 2 selectivity against C 2 H 5 OH, CO, NO 2 , NH 3 and H 2 S.