Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics
Ge doped (Bi 0.5 Na 0.5 )TiO 3 ceramics, (Bi 0.5 Na 0.5 )Ti 1-x Ge x O 3 (BNTG, x = 0, 0.05, 0.10, 0.15 and 0.2), were prepared by using a solid-state method. The crystal structure of the ceramics was investigated by X-ray diffraction method. It was found that, under suitable conditions, all composi...
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th-cmuir.6653943832-452242018-01-24T06:06:59Z Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics Orawan Khamman Ge doped (Bi 0.5 Na 0.5 )TiO 3 ceramics, (Bi 0.5 Na 0.5 )Ti 1-x Ge x O 3 (BNTG, x = 0, 0.05, 0.10, 0.15 and 0.2), were prepared by using a solid-state method. The crystal structure of the ceramics was investigated by X-ray diffraction method. It was found that, under suitable conditions, all compositions can form single perovskite phase with rhombohedral symmetry. The grain size and morphology of the ceramics were examined by SEM. The average grain size of the ceramics was found to decrease with increasing Ge content. The dielectric constant was measured as a function of both temperature and frequency. All samples exhibited a relaxor ferroelectric behavior. © 2014 Copyright Taylor and Francis Group, LLC. 2018-01-24T06:06:59Z 2018-01-24T06:06:59Z 2014-01-02 Journal 15635112 00150193 2-s2.0-84892886151 10.1080/00150193.2013.849981 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84892886151&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/45224 |
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Ge doped (Bi 0.5 Na 0.5 )TiO 3 ceramics, (Bi 0.5 Na 0.5 )Ti 1-x Ge x O 3 (BNTG, x = 0, 0.05, 0.10, 0.15 and 0.2), were prepared by using a solid-state method. The crystal structure of the ceramics was investigated by X-ray diffraction method. It was found that, under suitable conditions, all compositions can form single perovskite phase with rhombohedral symmetry. The grain size and morphology of the ceramics were examined by SEM. The average grain size of the ceramics was found to decrease with increasing Ge content. The dielectric constant was measured as a function of both temperature and frequency. All samples exhibited a relaxor ferroelectric behavior. © 2014 Copyright Taylor and Francis Group, LLC. |
| format |
Journal |
| author |
Orawan Khamman |
| spellingShingle |
Orawan Khamman Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics |
| author_facet |
Orawan Khamman |
| author_sort |
Orawan Khamman |
| title |
Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics |
| title_short |
Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics |
| title_full |
Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics |
| title_fullStr |
Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics |
| title_full_unstemmed |
Phase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramics |
| title_sort |
phase formation and dielectric properties of ge doped (bi 0.5na0.5)tio3 ceramics |
| publishDate |
2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84892886151&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/45224 |
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