Effects of Dy substitution for Bi on phase, microstructure and dielectric properties of layer-structured Bi4-xDyxTi 3O12 ceramics

• Main Authors: Thongmee N., Watcharapasorn A., Jiansirisomboon S.
• Format: Article
• Language: English
• Published: 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-84892854371&partnerID=40&md5=2742d699adaf6bce545739c0cd547f76; http://cmuir.cmu.ac.th/handle/6653943832/4760
• Institution: Chiang Mai University

Bi4-xDyxTi3O12 (when x = 0, 0.25, 0.5, 0.75 and 1.0) powders and ceramics were prepared by solid-state mixed oxide method. The calcination was carried out at 900°C for 4 h with heating/cooling rate 5°C/min. The ceramics were then sintered at a temperature between 950-1100°C for 4 hrs. The optimum sintering temperature was found to be 1000°C. X-ray diffraction indicated the existence of orthorhombic phase for all sintering temperatures. Scanning electron micrographs of ceramic surfaces showed a plate-like structure with different grain size. The results of room temperature dielectric constant revealed that Dy dopant could dielectric constant of Bi4Ti3O12 ceramic where it was optimized at x = 0.25. © 2014 Copyright Taylor and Francis Group, LLC.