Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO

The structural, dielectric and ferroelectric properties of Pb(Mg 1/3 Nb 2/3 ) 0.9 Ti 0.1 O 3 (PMNT) ceramics prepared with CuO as a sintering aid at various sintering temperatures between 950 C and 1150 C are investigated. The lattice parameters slightly increase with the sintering temperature >...

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Main Authors: Methee Promsawat, Jenny Y.Y. Wong, Anucha Watcharapasorn, Sukanda Jiansirisomboon
Format: Journal
Published: 2018
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84879991446&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/47723
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-477232018-04-25T08:43:14Z Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO Methee Promsawat Jenny Y.Y. Wong Anucha Watcharapasorn Sukanda Jiansirisomboon The structural, dielectric and ferroelectric properties of Pb(Mg 1/3 Nb 2/3 ) 0.9 Ti 0.1 O 3 (PMNT) ceramics prepared with CuO as a sintering aid at various sintering temperatures between 950 C and 1150 C are investigated. The lattice parameters slightly increase with the sintering temperature > 1050 C. A significant increase in the grain size is observed when the sintering temperature is increased from 1000 C to 1050 C. The maximum dielectric constant reaches the highest value of ∼22,000 for the ceramic sintered at 1050 C. For the ceramics sintered at > 1050 C, the temperature of maximum dielectric constant and the diffuseness parameters tend to increase with the increasing sintering temperature. The optimal sintering temperature for this ceramic is 1050 C, which displays significant improvements in ferroelectric p roperties at room temperature, i.e. the increase in the remanent polarization and the ferroelectric loop squareness© 2013 Elsevier B.V. All rights reserved. 2018-04-25T08:43:14Z 2018-04-25T08:43:14Z 2013-08-15 Journal 02540584 2-s2.0-84879991446 10.1016/j.matchemphys.2013.05.060 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84879991446&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/47723
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
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description The structural, dielectric and ferroelectric properties of Pb(Mg 1/3 Nb 2/3 ) 0.9 Ti 0.1 O 3 (PMNT) ceramics prepared with CuO as a sintering aid at various sintering temperatures between 950 C and 1150 C are investigated. The lattice parameters slightly increase with the sintering temperature > 1050 C. A significant increase in the grain size is observed when the sintering temperature is increased from 1000 C to 1050 C. The maximum dielectric constant reaches the highest value of ∼22,000 for the ceramic sintered at 1050 C. For the ceramics sintered at > 1050 C, the temperature of maximum dielectric constant and the diffuseness parameters tend to increase with the increasing sintering temperature. The optimal sintering temperature for this ceramic is 1050 C, which displays significant improvements in ferroelectric p roperties at room temperature, i.e. the increase in the remanent polarization and the ferroelectric loop squareness© 2013 Elsevier B.V. All rights reserved.
format Journal
author Methee Promsawat
Jenny Y.Y. Wong
Anucha Watcharapasorn
Sukanda Jiansirisomboon
spellingShingle Methee Promsawat
Jenny Y.Y. Wong
Anucha Watcharapasorn
Sukanda Jiansirisomboon
Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO
author_facet Methee Promsawat
Jenny Y.Y. Wong
Anucha Watcharapasorn
Sukanda Jiansirisomboon
author_sort Methee Promsawat
title Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO
title_short Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO
title_full Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO
title_fullStr Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO
title_full_unstemmed Effects of sintering temperature on microstructure and electrical properties of 0.9Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>-0.1PbTiO<inf>3</inf>modified with CuO
title_sort effects of sintering temperature on microstructure and electrical properties of 0.9pb(mg<inf>1/3</inf>nb<inf>2/3</inf>)o<inf>3</inf>-0.1pbtio<inf>3</inf>modified with cuo
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84879991446&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/47723
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