Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template
Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current-gate voltage characteristics. It was found that the mobilities of holes and electr...
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American Institute of Physics Inc.
2014
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th-cmuir.6653943832-48202014-08-30T02:55:49Z Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template Wongsaeng C. Singjai P. Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current-gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs. © 2014 AIP Publishing LLC. 2014-08-30T02:55:49Z 2014-08-30T02:55:49Z 2014 Article 00036951 10.1063/1.4871471 APPLA http://www.scopus.com/inward/record.url?eid=2-s2.0-84898969290&partnerID=40&md5=ae9ac5556ceeb4f4a1c5dafe8c0996b0 http://cmuir.cmu.ac.th/handle/6653943832/4820 English American Institute of Physics Inc. |
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Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current-gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs. © 2014 AIP Publishing LLC. |
| format |
Article |
| author |
Wongsaeng C. Singjai P. |
| spellingShingle |
Wongsaeng C. Singjai P. Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| author_facet |
Wongsaeng C. Singjai P. |
| author_sort |
Wongsaeng C. |
| title |
Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| title_short |
Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| title_full |
Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| title_fullStr |
Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| title_full_unstemmed |
Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| title_sort |
mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template |
| publisher |
American Institute of Physics Inc. |
| publishDate |
2014 |
| url |
http://www.scopus.com/inward/record.url?eid=2-s2.0-84898969290&partnerID=40&md5=ae9ac5556ceeb4f4a1c5dafe8c0996b0 http://cmuir.cmu.ac.th/handle/6653943832/4820 |
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