Crystal-structure dependent domain-switching behavior in BaTiO3 ceramic

• Main Authors: Wongdamnern N., Kanchiang K., Ngamjarurojana A., Ananta S., Laosiritaworn Y., Charoenphakdee A., Gupta S., Priya S., Yimnirun R.
• Format: Article
• Language: English
• Published: Institute of Physics Publishing 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-84904438253&partnerID=40&md5=525e9937ce5bac293d0b18610eb6e57a; http://cmuir.cmu.ac.th/handle/6653943832/4882
• Institution: Chiang Mai University

Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO3 ceramic. The scaling relation of the form 〈A〉 ∝ fM En 0, (where 〈A〉 is the area under the hysteresis loop, while f and E0 represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO 3. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon. © 2014 IOP Publishing Ltd.