Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method

The objective of this research was to study the effect of various parameters such as temperature and pH to the formation of cadmium indium selenide (CdIn2Se4) thin films, which were fabricated by solgel dip-coating method. This n-type semiconductor compound is suitable for application as thermoelect...

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Main Authors: Aun Anong Ruanthon, Thapanee Sarakonsri, Chanchana Thanachayanont
Format: Journal
Published: 2018
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http://cmuir.cmu.ac.th/jspui/handle/6653943832/49155
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-491552018-08-16T02:11:05Z Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method Aun Anong Ruanthon Thapanee Sarakonsri Chanchana Thanachayanont Materials Science The objective of this research was to study the effect of various parameters such as temperature and pH to the formation of cadmium indium selenide (CdIn2Se4) thin films, which were fabricated by solgel dip-coating method. This n-type semiconductor compound is suitable for application as thermoelectric materials. Cadmium, indium, selenium precursors were separately dissolved by solvents: ethanol, hydrochloric acid, and acetic acid to form metal alkoxides. The precursor solutions were then mixed together in N2atmosphere. These metal alkoxides were hydrolyzed by adding water and then polycondensed by adding ethylene glycol to become gels. These gels were adjusted to various acid-base values by adding diethylnolamine. Glass substrates were dipped into the gels to form thin films. These thin films were annealed at various temperatures in N2atmosphere and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and fourier transfrom infrared spectroscopy (FTIR) techniques. The results indicated that CdIn2Se4compound occurred by the reaction at room temperature with pH 4 and annealed at 450°C in N2atmosphere. © 2009 World Scientific Publishing Company. 2018-08-16T02:11:05Z 2018-08-16T02:11:05Z 2009-12-01 Journal 17937213 17936047 2-s2.0-80052324185 10.1142/S1793604709000806 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80052324185&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49155
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Materials Science
spellingShingle Materials Science
Aun Anong Ruanthon
Thapanee Sarakonsri
Chanchana Thanachayanont
Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
description The objective of this research was to study the effect of various parameters such as temperature and pH to the formation of cadmium indium selenide (CdIn2Se4) thin films, which were fabricated by solgel dip-coating method. This n-type semiconductor compound is suitable for application as thermoelectric materials. Cadmium, indium, selenium precursors were separately dissolved by solvents: ethanol, hydrochloric acid, and acetic acid to form metal alkoxides. The precursor solutions were then mixed together in N2atmosphere. These metal alkoxides were hydrolyzed by adding water and then polycondensed by adding ethylene glycol to become gels. These gels were adjusted to various acid-base values by adding diethylnolamine. Glass substrates were dipped into the gels to form thin films. These thin films were annealed at various temperatures in N2atmosphere and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and fourier transfrom infrared spectroscopy (FTIR) techniques. The results indicated that CdIn2Se4compound occurred by the reaction at room temperature with pH 4 and annealed at 450°C in N2atmosphere. © 2009 World Scientific Publishing Company.
format Journal
author Aun Anong Ruanthon
Thapanee Sarakonsri
Chanchana Thanachayanont
author_facet Aun Anong Ruanthon
Thapanee Sarakonsri
Chanchana Thanachayanont
author_sort Aun Anong Ruanthon
title Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
title_short Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
title_full Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
title_fullStr Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
title_full_unstemmed Preparation of CdIn<inf>2</inf>Se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
title_sort preparation of cdin<inf>2</inf>se<inf>4</inf>n-type semiconductor used as thermoelectric material by solgel method
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80052324185&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/49155
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