Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics
Dielectric properties, and phase transition behaviors of Sn doped 0.45PbZr1/2Ti1/2O3- 0.55PbNi1/3Nb2/3O3ceramics has been investigated. The ceramics were prepared by a normal solid-state method and were characterized, using a variety of techniques. For undoped samples, high relative permittivity of...
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th-cmuir.6653943832-494462018-08-16T02:17:33Z Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics K. Sutjarittangtham N. Tawichai U. Intatha S. Eitssayeam K. Pengpat G. Rujijanagul T. Tunkasiri Physics and Astronomy Dielectric properties, and phase transition behaviors of Sn doped 0.45PbZr1/2Ti1/2O3- 0.55PbNi1/3Nb2/3O3ceramics has been investigated. The ceramics were prepared by a normal solid-state method and were characterized, using a variety of techniques. For undoped samples, high relative permittivity of > 21000 (at 1k Hz) was found at the transition temperature of 104°C. With increasing Sn concentration, the degree of diffuse phase transition was enhanced and a linear reduction in the transition temperature was produced. © 2009 American Institute of Physics. 2018-08-16T02:17:33Z 2018-08-16T02:17:33Z 2009-11-25 Conference Proceeding 15517616 0094243X 2-s2.0-70450091387 10.1063/1.3203230 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70450091387&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49446 |
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Physics and Astronomy K. Sutjarittangtham N. Tawichai U. Intatha S. Eitssayeam K. Pengpat G. Rujijanagul T. Tunkasiri Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics |
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Dielectric properties, and phase transition behaviors of Sn doped 0.45PbZr1/2Ti1/2O3- 0.55PbNi1/3Nb2/3O3ceramics has been investigated. The ceramics were prepared by a normal solid-state method and were characterized, using a variety of techniques. For undoped samples, high relative permittivity of > 21000 (at 1k Hz) was found at the transition temperature of 104°C. With increasing Sn concentration, the degree of diffuse phase transition was enhanced and a linear reduction in the transition temperature was produced. © 2009 American Institute of Physics. |
format |
Conference Proceeding |
author |
K. Sutjarittangtham N. Tawichai U. Intatha S. Eitssayeam K. Pengpat G. Rujijanagul T. Tunkasiri |
author_facet |
K. Sutjarittangtham N. Tawichai U. Intatha S. Eitssayeam K. Pengpat G. Rujijanagul T. Tunkasiri |
author_sort |
K. Sutjarittangtham |
title |
Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics |
title_short |
Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics |
title_full |
Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics |
title_fullStr |
Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics |
title_full_unstemmed |
Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics |
title_sort |
electrical properties and phase transition behaviors of sn doped 0.45pzt- 0.55pnn ceramics |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70450091387&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49446 |
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