Dielectric and ferroelectric properties of annealed B2O 3 doped Ba(Ti0.9Sn0.1)O3 ceramics
In the present work, the posted sintered annealing method was applied for B2O3doped Ba(Ti0.9Sn0.1)O3ceramics. The ceramics were fabricated via a solid state reaction method: sintered at 1350°C for 24 h followed by annealing at 1100°C for 4-32 h. Many electrical properties of the ceramics annealed at...
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| Main Authors: | , , , , |
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| Format: | Journal |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960739147&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/50074 |
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| Institution: | Chiang Mai University |
| Summary: | In the present work, the posted sintered annealing method was applied for B2O3doped Ba(Ti0.9Sn0.1)O3ceramics. The ceramics were fabricated via a solid state reaction method: sintered at 1350°C for 24 h followed by annealing at 1100°C for 4-32 h. Many electrical properties of the ceramics annealed at various annealing times were investigated with a variety of methods. Annealing for 4 h produced a sharper phase transition with high dielectric constant. The high dielectric constant of 27,000 was recorded at ferroelectric to paraelectric phase transition temperature of 38°C. This sample also showed a high dielectric tunability of 70%. Ferroelectric performance of the sample was also improved. The improvements in electrical properties were related to the chemical homogeneity of the sample after annealing. Copyright © Taylor &Francis Group, LLC. |
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