Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics

The Bi0.2K0.8(Zn0.1Ti0.1) Ta0.8O3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 °C for undoped Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 and...

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Main Authors: Piyachon Ketsuwan, Anurak Prasatkhetragarn, Supon Ananta, Chien Chih Huang, David P. Cann, Rattikorn Yimnirun
格式: Book Series
出版: 2018
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spelling th-cmuir.6653943832-508542018-09-04T04:48:50Z Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics Piyachon Ketsuwan Anurak Prasatkhetragarn Supon Ananta Chien Chih Huang David P. Cann Rattikorn Yimnirun Engineering Materials Science The Bi0.2K0.8(Zn0.1Ti0.1) Ta0.8O3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 °C for undoped Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 and sintered at 1100 °C for Li doped one. The dielectric properties indicate the diffused phase transition (DPT). The dielectric loss of undoped ceramic increases with increasing frequency in temperature range 270 °C down to -150 °C, which suggests low temperature relaxation, while the dielectric loss of Li doped ceramic reveals the interesting lower value over a wide temperature range of about 0 - 300 °C. © (2010) Trans Tech Publications. 2018-09-04T04:46:33Z 2018-09-04T04:46:33Z 2010-02-08 Book Series 10139826 2-s2.0-75749126529 10.4028/www.scientific.net/KEM.421-422.255 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=75749126529&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/50854
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Engineering
Materials Science
spellingShingle Engineering
Materials Science
Piyachon Ketsuwan
Anurak Prasatkhetragarn
Supon Ananta
Chien Chih Huang
David P. Cann
Rattikorn Yimnirun
Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics
description The Bi0.2K0.8(Zn0.1Ti0.1) Ta0.8O3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 °C for undoped Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 and sintered at 1100 °C for Li doped one. The dielectric properties indicate the diffused phase transition (DPT). The dielectric loss of undoped ceramic increases with increasing frequency in temperature range 270 °C down to -150 °C, which suggests low temperature relaxation, while the dielectric loss of Li doped ceramic reveals the interesting lower value over a wide temperature range of about 0 - 300 °C. © (2010) Trans Tech Publications.
format Book Series
author Piyachon Ketsuwan
Anurak Prasatkhetragarn
Supon Ananta
Chien Chih Huang
David P. Cann
Rattikorn Yimnirun
author_facet Piyachon Ketsuwan
Anurak Prasatkhetragarn
Supon Ananta
Chien Chih Huang
David P. Cann
Rattikorn Yimnirun
author_sort Piyachon Ketsuwan
title Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics
title_short Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics
title_full Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics
title_fullStr Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics
title_full_unstemmed Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics
title_sort dielectric properties of bi0.2k0.8(zn 0.1ti0.1)ta0.8o3 ceramics
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=75749126529&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/50854
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