Crystal-structure dependent domain-switching behavior in BaTiO3 ceramic

• Main Authors: Natthapong Wongdamnern, Kanokwan Kanchiang, Athipong Ngamjarurojana, Supon Ananta, Yongyut Laosiritaworn, Anek Charoenphakdee, Shashaank Gupta, Shashank Priya, Rattikorn Yimnirun
• Format: Journal
• Published: 2018
• Subjects: Computer Science; Engineering; Materials Science; Physics and Astronomy
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84904438253&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/53371
• Institution: Chiang Mai University

Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO3 ceramic. The scaling relation of the form 〈A〉 ∝ fM En0, (where 〈A〉 is the area under the hysteresis loop, while f and E0 represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO 3. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon. © 2014 IOP Publishing Ltd.