Fabrication of 90° wall of {100} plane on (100) Si by NaOH solution via design of experiments
The experimental trials were conducted by design of experiments (DOE) technique to find an anisotropic wet etching condition that achieves 90° wall angle on silicon (100) orientation wafer. Three considered factors assigned to the DOE were NaOH concentration, solution temperature, and stirring speed...
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| 格式: | Book Series |
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2018
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84898902835&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/53545 |
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| 機構: | Chiang Mai University |