Dielectric properties and microstructure of CaCu3Ti 4-xMnxO12 ceramics
In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solidstate reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (εr) still r...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2014
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| Online Access: | http://www.scopus.com/inward/record.url?eid=2-s2.0-58149518400&partnerID=40&md5=7bf38c30e3255a2ef9608c80276ab720 http://cmuir.cmu.ac.th/handle/6653943832/5392 |
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| Institution: | Chiang Mai University |
| Language: | English |
| Summary: | In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solidstate reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (εr) still remains high. The sample CaCu 3Ti3.76Mn0.24O12 exhibits a high εr over 1200 and a low dielectric loss below 0.06 at room temperature. Furthermore, the εr value of this sample shows rather independent with temperature. SEM micrographs show that the sample is dense ( ≥ 90% of theoretical density) and the grain size of the samples was gradually reduced with increasing x. This CaCu3Ti4-x MnxO12 system is believed to be a promising candidate for capacitor applications. |
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