Formation energies and chemical potential diagrams of II-Ge-N<inf>2</inf> semiconductors
© 2016 Taylor & Francis Group, LLC. III-Nitride wide band gap semiconductors are well known for optoelectronic and electronic applications. They however have disadvantages, for example, the high cost of Indium, difficulties of p-type doping and phase separation in their alloys. In this work, t...
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| Format: | Journal |
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2018
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| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982299785&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/55718 |
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| Institution: | Chiang Mai University |
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