Changes in dielectric properties of Pb(In1/2Nb 1/2)O3-PbTiO3 ceramics under compressive stress applied parallel and perpendicular to an electric field

The influences of compressive stress on the dielectric properties of (1 - x)Pb(In1/2Nb1/2)O3-xPbTiO3 (x = 0.1-0.5) ceramics was investigated in this study. The dielectric properties were measured under compressive stress applied parallel and perpendicular to electric field. The results clearly showe...

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Bibliographic Details
Main Authors: Unruan M., Wongsaenmai S., Laosiritaworn Y., Ananta S., Yimnirun R.
Format: Article
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-42549125009&partnerID=40&md5=4ba21c5d33520b3d8bcfb89a0fc8675a
http://cmuir.cmu.ac.th/handle/6653943832/5585
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Institution: Chiang Mai University
Language: English
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Summary:The influences of compressive stress on the dielectric properties of (1 - x)Pb(In1/2Nb1/2)O3-xPbTiO3 (x = 0.1-0.5) ceramics was investigated in this study. The dielectric properties were measured under compressive stress applied parallel and perpendicular to electric field. The results clearly showed that the superimposed compression stress had pronounced effects on the dielectric properties of PIN-PT ceramics. In general, with increasing compressive stress the dielectric constant of the ceramics increased and decreased when the stress was applied parallel and perpendicular, respectively, to the electric field direction. The dielectric loss tangent, however, decreased in both stress cases. The observations were mainly interpreted in terms of competing influences of the domain switching through non-180° domain walls, clamping of domain walls, de-ageing and the stress-induced decrease in the switchable part of spontaneous polarization. © 2008 IOP Publishing Ltd.