Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films

© 2017 IOP Publishing Ltd. Low-bandgap transparent conductive oxides will be of interest to researchers who wish to address the health hazards of blue radiation emission from electronic displays. Here, we present a single-step, low-temperature fast enough (throughput > 60 nm min-1) process to gro...

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Main Authors: Long Wen, Manish Kumar, Hyung Jun Cho, Komgrit Leksakul, Jeon Geon Han
Format: Journal
Published: 2018
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http://cmuir.cmu.ac.th/jspui/handle/6653943832/57481
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-574812018-09-05T03:53:30Z Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films Long Wen Manish Kumar Hyung Jun Cho Komgrit Leksakul Jeon Geon Han Materials Science Physics and Astronomy © 2017 IOP Publishing Ltd. Low-bandgap transparent conductive oxides will be of interest to researchers who wish to address the health hazards of blue radiation emission from electronic displays. Here, we present a single-step, low-temperature fast enough (throughput > 60 nm min-1) process to grow highly c-axis-oriented crystalline Al-doped ZnO thin films via advanced plasma processing. Dual-power DC-magnetron sputtering plasma was employed for the synthesis of thin films. The addition of top power to a pre-existing rectangular power pushed additional ions to a confined plasma and increased the plasma density and electron temperature. The effect of this additional-ion pushing was systematically studied using the microstructure, surface properties, and electronic properties. As a result, bandgap reduction from 3.35 eV to 3.10 eV and tailoring of electrical resistivity (4.89 × 10-4-8.32 × 10-3ω cm) and Seebeck coefficients (21-48 μV K-1) were achieved in addition to excellent transparency. Given their properties, the obtained films show promise for multifunctional applications, such as in UV and near-blue radiation shielding, transparent conductive electrodes and low-temperature thermoelectrics. 2018-09-05T03:43:03Z 2018-09-05T03:43:03Z 2017-04-13 Journal 13616463 00223727 2-s2.0-85018463452 10.1088/1361-6463/aa6666 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85018463452&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/57481
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Materials Science
Physics and Astronomy
spellingShingle Materials Science
Physics and Astronomy
Long Wen
Manish Kumar
Hyung Jun Cho
Komgrit Leksakul
Jeon Geon Han
Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films
description © 2017 IOP Publishing Ltd. Low-bandgap transparent conductive oxides will be of interest to researchers who wish to address the health hazards of blue radiation emission from electronic displays. Here, we present a single-step, low-temperature fast enough (throughput > 60 nm min-1) process to grow highly c-axis-oriented crystalline Al-doped ZnO thin films via advanced plasma processing. Dual-power DC-magnetron sputtering plasma was employed for the synthesis of thin films. The addition of top power to a pre-existing rectangular power pushed additional ions to a confined plasma and increased the plasma density and electron temperature. The effect of this additional-ion pushing was systematically studied using the microstructure, surface properties, and electronic properties. As a result, bandgap reduction from 3.35 eV to 3.10 eV and tailoring of electrical resistivity (4.89 × 10-4-8.32 × 10-3ω cm) and Seebeck coefficients (21-48 μV K-1) were achieved in addition to excellent transparency. Given their properties, the obtained films show promise for multifunctional applications, such as in UV and near-blue radiation shielding, transparent conductive electrodes and low-temperature thermoelectrics.
format Journal
author Long Wen
Manish Kumar
Hyung Jun Cho
Komgrit Leksakul
Jeon Geon Han
author_facet Long Wen
Manish Kumar
Hyung Jun Cho
Komgrit Leksakul
Jeon Geon Han
author_sort Long Wen
title Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films
title_short Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films
title_full Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films
title_fullStr Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films
title_full_unstemmed Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films
title_sort low-bandgap, highly c-axis-oriented al-doped zno thin films
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85018463452&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/57481
_version_ 1681424886977789952