Preparation and electrical properties of nanocrystalline BCNO
© 2017 Elsevier B.V. We reported a synthesis of quaternary B-C-N-O alloys containing boron, carbon, nitrogen, and oxygen atoms by using melamine-boric acid adduct colloidal solutions (C3N6H6·2H3BO3) as a precursor via chemical reactions. The nanocrystalline BCNO was observed by scanning electron mic...
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th-cmuir.6653943832-587002018-09-05T04:39:38Z Preparation and electrical properties of nanocrystalline BCNO Posak Tippo Pisith Singjai Supab Choopun Sumet Sakulsermsuk Engineering Materials Science Physics and Astronomy © 2017 Elsevier B.V. We reported a synthesis of quaternary B-C-N-O alloys containing boron, carbon, nitrogen, and oxygen atoms by using melamine-boric acid adduct colloidal solutions (C3N6H6·2H3BO3) as a precursor via chemical reactions. The nanocrystalline BCNO was observed by scanning electron microscope. Results from X-ray diffraction show a prominent peak at 28.13° for BCNO, indicating the interlayer distance of 0.317 nm. Elemental compositions and chemical bonds of BCNO were verified by X-ray photoemission spectroscopy. Electrical measurement of BCNO-based field effect transistors gave 0.3 cm2V−1s−1of charge mobility, 0.77 eV of band gap with 105of on/off ratio. 2018-09-05T04:28:51Z 2018-09-05T04:28:51Z 2018-01-15 Journal 18734979 0167577X 2-s2.0-85029937460 10.1016/j.matlet.2017.09.076 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85029937460&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/58700 |
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Engineering Materials Science Physics and Astronomy Posak Tippo Pisith Singjai Supab Choopun Sumet Sakulsermsuk Preparation and electrical properties of nanocrystalline BCNO |
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© 2017 Elsevier B.V. We reported a synthesis of quaternary B-C-N-O alloys containing boron, carbon, nitrogen, and oxygen atoms by using melamine-boric acid adduct colloidal solutions (C3N6H6·2H3BO3) as a precursor via chemical reactions. The nanocrystalline BCNO was observed by scanning electron microscope. Results from X-ray diffraction show a prominent peak at 28.13° for BCNO, indicating the interlayer distance of 0.317 nm. Elemental compositions and chemical bonds of BCNO were verified by X-ray photoemission spectroscopy. Electrical measurement of BCNO-based field effect transistors gave 0.3 cm2V−1s−1of charge mobility, 0.77 eV of band gap with 105of on/off ratio. |
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Journal |
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Posak Tippo Pisith Singjai Supab Choopun Sumet Sakulsermsuk |
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Posak Tippo Pisith Singjai Supab Choopun Sumet Sakulsermsuk |
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Posak Tippo |
| title |
Preparation and electrical properties of nanocrystalline BCNO |
| title_short |
Preparation and electrical properties of nanocrystalline BCNO |
| title_full |
Preparation and electrical properties of nanocrystalline BCNO |
| title_fullStr |
Preparation and electrical properties of nanocrystalline BCNO |
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Preparation and electrical properties of nanocrystalline BCNO |
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preparation and electrical properties of nanocrystalline bcno |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85029937460&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/58700 |
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