Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route
Lead zirconate titanate (PZT) precursor sols were prepared using a triol based sol-gel route. Inorganics salts metal alkoxides lead acetate trihydrate [Pb(OOCCH3)2·3H2O], titanium (IV) isopropoxide [Ti(OCH(CH3)2)4], and zirconium n-propoxide [ZrOC3H7)4] were used as starting materials. Thin films we...
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th-cmuir.6653943832-59532014-08-30T03:23:39Z Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route Thountom S. Naksata M. Tunkasiri T. Thavornyutikarn P. Lead zirconate titanate (PZT) precursor sols were prepared using a triol based sol-gel route. Inorganics salts metal alkoxides lead acetate trihydrate [Pb(OOCCH3)2·3H2O], titanium (IV) isopropoxide [Ti(OCH(CH3)2)4], and zirconium n-propoxide [ZrOC3H7)4] were used as starting materials. Thin films were deposited by spin coating onto Pt/Ti/SiO2/Si substrates. The samples were pre-heated (pyrolysis) on a calibrated hotplate over the temperature range of 200-400 °C for 10 min then firing at a temperature of 600 °C for 30 min. Randomly-oriented PZT thin films pre-heated at 400 °C for 10 min and annealed at 600 °C for 30 min showed well-defined ferroelectric hysteresis loops with a remanent polarization of 27 μC/cm2 and a coercive field of 115 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.040, respectively. The microstructures of the thin films are dense, crack-free and homogeneous with fine grains about 15-20 nm in size. © 2008 Elsevier Ltd and Techna Group S.r.l. 2014-08-30T03:23:39Z 2014-08-30T03:23:39Z 2009 Article 02728842 10.1016/j.ceramint.2007.10.038 CINND http://www.scopus.com/inward/record.url?eid=2-s2.0-55949091467&partnerID=40&md5=d7304e530dc43c2b9b2fcf564f530daa http://cmuir.cmu.ac.th/handle/6653943832/5953 English |
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Lead zirconate titanate (PZT) precursor sols were prepared using a triol based sol-gel route. Inorganics salts metal alkoxides lead acetate trihydrate [Pb(OOCCH3)2·3H2O], titanium (IV) isopropoxide [Ti(OCH(CH3)2)4], and zirconium n-propoxide [ZrOC3H7)4] were used as starting materials. Thin films were deposited by spin coating onto Pt/Ti/SiO2/Si substrates. The samples were pre-heated (pyrolysis) on a calibrated hotplate over the temperature range of 200-400 °C for 10 min then firing at a temperature of 600 °C for 30 min. Randomly-oriented PZT thin films pre-heated at 400 °C for 10 min and annealed at 600 °C for 30 min showed well-defined ferroelectric hysteresis loops with a remanent polarization of 27 μC/cm2 and a coercive field of 115 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.040, respectively. The microstructures of the thin films are dense, crack-free and homogeneous with fine grains about 15-20 nm in size. © 2008 Elsevier Ltd and Techna Group S.r.l. |
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Thountom S. Naksata M. Tunkasiri T. Thavornyutikarn P. |
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Thountom S. Naksata M. Tunkasiri T. Thavornyutikarn P. Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
author_facet |
Thountom S. Naksata M. Tunkasiri T. Thavornyutikarn P. |
author_sort |
Thountom S. |
title |
Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
title_short |
Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
title_full |
Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
title_fullStr |
Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
title_full_unstemmed |
Phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
title_sort |
phase evolution and electrical properties of lead zirconate titanate thin films grown by using a triol sol-gel route |
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2014 |
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http://www.scopus.com/inward/record.url?eid=2-s2.0-55949091467&partnerID=40&md5=d7304e530dc43c2b9b2fcf564f530daa http://cmuir.cmu.ac.th/handle/6653943832/5953 |
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