Dielectric properties and microstructure of CaCu3Ti 4-xMnxO12 ceramics

In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solidstate reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (εr) still r...

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Bibliographic Details
Main Authors: W. Makcharoen, J. Tontrakoon, P. Thavornyutikarn, D. P. Cann, T. Tunkasiri
Format: Conference Proceeding
Published: 2018
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Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=58149518400&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60400
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Institution: Chiang Mai University
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Summary:In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solidstate reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (εr) still remains high. The sample CaCu 3Ti3.76Mn0.24O12 exhibits a high εr over 1200 and a low dielectric loss below 0.06 at room temperature. Furthermore, the εr value of this sample shows rather independent with temperature. SEM micrographs show that the sample is dense ( ≥ 90% of theoretical density) and the grain size of the samples was gradually reduced with increasing x. This CaCu3Ti4-x MnxO12 system is believed to be a promising candidate for capacitor applications.