Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode
The Schottky barrier diode of the platinum thin film on the antimony doped barium strontium titanate polycrystalline ceramics was prepared and its electrical conduction was investigated. At the low field forward biasing, the current voltage relationship was Ohmic as expected from the space charge li...
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th-cmuir.6653943832-607422018-09-10T03:48:47Z Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode N. Sirikulrat Physics and Astronomy The Schottky barrier diode of the platinum thin film on the antimony doped barium strontium titanate polycrystalline ceramics was prepared and its electrical conduction was investigated. At the low field forward biasing, the current voltage relationship was Ohmic as expected from the space charge limited conduction (SCLC). Results from the high field biasing indicated that the exponential conduction occurred due to the Schottky emission rather than the trap free square law arising from the SCLC. The barrier height and the ideality factor of 0.87 eV and 1.5 were obtained in the diode with the Pt film thickness of 84 nm. © 2008 American Institute of Physics. 2018-09-10T03:48:47Z 2018-09-10T03:48:47Z 2008-02-22 Journal 00036951 2-s2.0-39349109263 10.1063/1.2883936 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=39349109263&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60742 |
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Physics and Astronomy |
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Physics and Astronomy N. Sirikulrat Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode |
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The Schottky barrier diode of the platinum thin film on the antimony doped barium strontium titanate polycrystalline ceramics was prepared and its electrical conduction was investigated. At the low field forward biasing, the current voltage relationship was Ohmic as expected from the space charge limited conduction (SCLC). Results from the high field biasing indicated that the exponential conduction occurred due to the Schottky emission rather than the trap free square law arising from the SCLC. The barrier height and the ideality factor of 0.87 eV and 1.5 were obtained in the diode with the Pt film thickness of 84 nm. © 2008 American Institute of Physics. |
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N. Sirikulrat |
| author_facet |
N. Sirikulrat |
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N. Sirikulrat |
| title |
Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode |
| title_short |
Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode |
| title_full |
Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode |
| title_fullStr |
Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode |
| title_full_unstemmed |
Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode |
| title_sort |
platinum thin film-antimony doped barium strontium titanate schottky barrier diode |
| publishDate |
2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=39349109263&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60742 |
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