Synthesis of silicon carbide nanowires doped with Al2O 3

Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were s...

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Main Authors: Thanut Jintakosol, Pisith Singjai
格式: Book Series
出版: 2018
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在線閱讀:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36048962133&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60943
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總結:Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were separated from the inner core and characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. A non-uniform layer thickness of alumina coating on SiC NWs was clearly observed when the doping was increased from 1 to 2 and 3 wt.%.