Synthesis of silicon carbide nanowires doped with Al2O 3
Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were s...
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th-cmuir.6653943832-609432018-09-10T04:05:59Z Synthesis of silicon carbide nanowires doped with Al2O 3 Thanut Jintakosol Pisith Singjai Chemical Engineering Materials Science Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were separated from the inner core and characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. A non-uniform layer thickness of alumina coating on SiC NWs was clearly observed when the doping was increased from 1 to 2 and 3 wt.%. 2018-09-10T04:01:40Z 2018-09-10T04:01:40Z 2007-11-19 Book Series 10139826 2-s2.0-36048962133 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36048962133&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60943 |
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Chemical Engineering Materials Science Thanut Jintakosol Pisith Singjai Synthesis of silicon carbide nanowires doped with Al2O 3 |
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Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were separated from the inner core and characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. A non-uniform layer thickness of alumina coating on SiC NWs was clearly observed when the doping was increased from 1 to 2 and 3 wt.%. |
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Book Series |
author |
Thanut Jintakosol Pisith Singjai |
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Thanut Jintakosol Pisith Singjai |
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Thanut Jintakosol |
title |
Synthesis of silicon carbide nanowires doped with Al2O 3 |
title_short |
Synthesis of silicon carbide nanowires doped with Al2O 3 |
title_full |
Synthesis of silicon carbide nanowires doped with Al2O 3 |
title_fullStr |
Synthesis of silicon carbide nanowires doped with Al2O 3 |
title_full_unstemmed |
Synthesis of silicon carbide nanowires doped with Al2O 3 |
title_sort |
synthesis of silicon carbide nanowires doped with al2o 3 |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36048962133&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60943 |
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