Dielectric properties of Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 ceramics

• Main Authors: Ketsuwan P., Prasatkhetragarn A., Ananta S., Huang C.-C., Cann D.P., Yimnirun R.
• Format: Conference or Workshop Item
• Language: English
• Published: 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-75749126529&partnerID=40&md5=3582b19619d36251be5a5f740567804e; http://cmuir.cmu.ac.th/handle/6653943832/6329
• Institution: Chiang Mai University

The Bi0.2K0.8(Zn0.1Ti0.1) Ta0.8O3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 °C for undoped Bi0.2K0.8(Zn 0.1Ti0.1)Ta0.8O3 and sintered at 1100 °C for Li doped one. The dielectric properties indicate the diffused phase transition (DPT). The dielectric loss of undoped ceramic increases with increasing frequency in temperature range 270 °C down to -150 °C, which suggests low temperature relaxation, while the dielectric loss of Li doped ceramic reveals the interesting lower value over a wide temperature range of about 0 - 300 °C. © (2010) Trans Tech Publications.