Synthesis and high-temperature thermoelectric properties of Ni 3GaSb and Ni3InSb

• Main Authors: Suriwong T., Kurosaki K., Thongtem S., Harnwunggmoung A., Sugahara T., Plirdpring T., Ohishi Y., Muta H., Yamanaka S.
• Format: Article
• Language: English
• Published: 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-79551687717&partnerID=40&md5=c0f294d87b53210f6776fa864a3e806a; http://cmuir.cmu.ac.th/handle/6653943832/6596
• Institution: Chiang Mai University

Ni3GaSb and Ni3InSb were successfully synthesized by the direct reaction of Ni and GaSb or InSb. The XRD patterns and the lattice parameters of these compounds were in good agreement with the literature data. The Seebeck coefficient (S), the electrical resistivity (ρ), and the thermal conductivity (κ) of Ni3GaSb and Ni3InSb were examined in the temperature range from room temperature to 1073 K. Both compounds indicated metal-like characteristics. The power factor (S 2ρ-1) values increased with temperature and reached maximum at 1073 K. The κ and the dimensionless figure of merit ZT of both samples increased with temperature. The maximum values of the ZT of Ni 3GaSb and Ni3InSb were obtained at 1073 K to be 0.022 and 0.023, respectively. © 2011 Elsevier B.V. All rights reserved.