Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba 0.8Sr 0.2)TiO 3 heterojunction diode
The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as...
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th-cmuir.6653943832-68352014-08-30T03:51:18Z Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba 0.8Sr 0.2)TiO 3 heterojunction diode Sirikulrat N. The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J=∑ mC mV m where C m is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. © 2011 Elsevier B.V. All rights reserved. 2014-08-30T03:51:18Z 2014-08-30T03:51:18Z 2012 Article 406090 10.1016/j.tsf.2011.12.063 THSFA http://www.scopus.com/inward/record.url?eid=2-s2.0-84857357314&partnerID=40&md5=4825615bf7ac0f30d8aa03e7d8672879 http://cmuir.cmu.ac.th/handle/6653943832/6835 English |
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The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J=∑ mC mV m where C m is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. © 2011 Elsevier B.V. All rights reserved. |
| format |
Article |
| author |
Sirikulrat N. |
| spellingShingle |
Sirikulrat N. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba 0.8Sr 0.2)TiO 3 heterojunction diode |
| author_facet |
Sirikulrat N. |
| author_sort |
Sirikulrat N. |
| title |
Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba
0.8Sr
0.2)TiO
3 heterojunction diode |
| title_short |
Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba
0.8Sr
0.2)TiO
3 heterojunction diode |
| title_full |
Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba
0.8Sr
0.2)TiO
3 heterojunction diode |
| title_fullStr |
Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba
0.8Sr
0.2)TiO
3 heterojunction diode |
| title_full_unstemmed |
Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba
0.8Sr
0.2)TiO
3 heterojunction diode |
| title_sort |
power series fitting of current-voltage characteristics of al doped zno thin film-sb doped (ba
0.8sr
0.2)tio
3 heterojunction diode |
| publishDate |
2014 |
| url |
http://www.scopus.com/inward/record.url?eid=2-s2.0-84857357314&partnerID=40&md5=4825615bf7ac0f30d8aa03e7d8672879 http://cmuir.cmu.ac.th/handle/6653943832/6835 |
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1681420688137650176 |