Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires
Large-scale SiC nanowires have been synthesized via reacting silicon powder with carbon powder using Ni 2O 3 as catalyst by simple chemical vapor deposition method. The mixed powders were heated in an alumina horizontal tube furnace up to 1350 °C for 1 h in an argon atmosphere. Characterization by s...
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th-cmuir.6653943832-68372014-08-30T03:51:18Z Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires Longkullabutra H. Nhuapeng W. Thamjaree W. Large-scale SiC nanowires have been synthesized via reacting silicon powder with carbon powder using Ni 2O 3 as catalyst by simple chemical vapor deposition method. The mixed powders were heated in an alumina horizontal tube furnace up to 1350 °C for 1 h in an argon atmosphere. Characterization by scanning electron microscope, transmission electron microscope, and X-ray diffractometer indicated that the nanowires covered with a thin layer of amorphous SiO x. The 3C-SiC nanowires were formed by vapor-liquid-solid growth mechanism and they have diameters of about 20-90 nm. The result of FT-IR spectrum shows the nanowires were composed of SiC and amorphous of silicon oxide. © 2012 Elsevier B.V. All rights reserved. 2014-08-30T03:51:18Z 2014-08-30T03:51:18Z 2012 Conference Paper 15671739 10.1016/j.cap.2012.02.032 http://www.scopus.com/inward/record.url?eid=2-s2.0-84867523635&partnerID=40&md5=26b05cf0ed27e546e6cdc399c0020d4d http://cmuir.cmu.ac.th/handle/6653943832/6837 English |
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Large-scale SiC nanowires have been synthesized via reacting silicon powder with carbon powder using Ni 2O 3 as catalyst by simple chemical vapor deposition method. The mixed powders were heated in an alumina horizontal tube furnace up to 1350 °C for 1 h in an argon atmosphere. Characterization by scanning electron microscope, transmission electron microscope, and X-ray diffractometer indicated that the nanowires covered with a thin layer of amorphous SiO x. The 3C-SiC nanowires were formed by vapor-liquid-solid growth mechanism and they have diameters of about 20-90 nm. The result of FT-IR spectrum shows the nanowires were composed of SiC and amorphous of silicon oxide. © 2012 Elsevier B.V. All rights reserved. |
format |
Conference or Workshop Item |
author |
Longkullabutra H. Nhuapeng W. Thamjaree W. |
spellingShingle |
Longkullabutra H. Nhuapeng W. Thamjaree W. Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires |
author_facet |
Longkullabutra H. Nhuapeng W. Thamjaree W. |
author_sort |
Longkullabutra H. |
title |
Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires |
title_short |
Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires |
title_full |
Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires |
title_fullStr |
Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires |
title_full_unstemmed |
Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires |
title_sort |
large-scale: synthesis, microstructure, and ft-ir property of sic nanowires |
publishDate |
2014 |
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http://www.scopus.com/inward/record.url?eid=2-s2.0-84867523635&partnerID=40&md5=26b05cf0ed27e546e6cdc399c0020d4d http://cmuir.cmu.ac.th/handle/6653943832/6837 |
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